擴散(san)硅壓(ya)力變(bian)送器制造商(shang)在受到外力作(zuo)用產生極微(wei)小應變(bian)時(一(yi)般(ban)步于400微(wei)應變(bian)),其(qi)內(nei)部原子結構的電子能級狀態會發生變(bian)化,從而(er)導致其(qi)電阻率劇烈變(bian)化(G因子突變(bian))。
更(geng)新時間:2024-02-29 訪(fang)問次數:1186擴散硅壓力(li)變(bian)送(song)器廠硅單晶(jing)材料在受(shou)到外力(li)作用(yong)產(chan)生(sheng)極微小應變(bian)時(一(yi)般(ban)步于400微應變(bian)),其(qi)內部原子(zi)結構的電(dian)子(zi)能級狀態會發生(sheng)變(bian)化。
更新時間(jian):2024-02-29 訪問次數:1812擴(kuo)散硅壓(ya)力變(bian)(bian)(bian)送器優(you)勢硅單晶材料(liao)在受到(dao)外力作(zuo)用產(chan)生(sheng)極微小應變(bian)(bian)(bian)時(一般步于400微應變(bian)(bian)(bian)),其(qi)內(nei)部原子結構的(de)電子能(neng)級狀(zhuang)態會發生(sheng)變(bian)(bian)(bian)化,從而導致其(qi)電阻(zu)率劇烈變(bian)(bian)(bian)化(G因子突變(bian)(bian)(bian))。
更新時間(jian):2024-02-29 訪問(wen)次數:926擴散(san)硅(gui)壓力(li)變(bian)(bian)(bian)(bian)送器廠家(jia)應(ying)用硅(gui)單晶材(cai)料在受到外力(li)作(zuo)用產生極微小(xiao)應(ying)變(bian)(bian)(bian)(bian)時(一般步(bu)于400微應(ying)變(bian)(bian)(bian)(bian)),其(qi)內部原子(zi)結構的電子(zi)能級狀態會(hui)發生變(bian)(bian)(bian)(bian)化,從而(er)導(dao)致其(qi)電阻率劇烈變(bian)(bian)(bian)(bian)化(G因(yin)子(zi)突變(bian)(bian)(bian)(bian))。
更(geng)新時間:2024-02-28 訪問次數:3877擴散硅壓力變(bian)(bian)送器硅單晶材料在受到外力作(zuo)用產生極(ji)微(wei)小應(ying)變(bian)(bian)時(一般步于400微(wei)應(ying)變(bian)(bian)),其內部原子結(jie)構的電子能級狀態(tai)會發生變(bian)(bian)化,從(cong)而導致其電阻率劇烈變(bian)(bian)化(G因子突變(bian)(bian))。
更新(xin)時間(jian):2024-02-27 訪問次(ci)數:3393